shantou huashan electronic devices co.,ltd . HBS170 n-channel enhancement mode field effect t r ansistor ? general description 1- d 2-g 3-s t o -92 these pr oducts have been designed to minimiz e on-state r e sistance while pr ovide rugged, r e liable, and fa st switching perf ormance. they can be used in most applications r e quiring up to 500ma d c . these pr oducts ar e particularly suited for low voltage, low curr ent applications such as small servo motor contr o l, power mosfet gate drivers, and other switching applications. ? f e a t u r e s high density cell design for low r d s(on). v o ltage contr o lled small signal switch. rugged and r e liable. high saturation curr ent capability . ? maximum ratings ? ta = 2 5 ?? unless otherwise specified ? t stg ?a?a s t orage t e m p e r ature --- -- -- --- -- -- -- -- -- - --- -- -- -- -- -- - --- -- -- -- -- -- - --- -- - 55~150 ?? t j ?a?a oper ating junction t e m p e r at ure -- -- -- -- -- -- -- -- -- -- -- -- - - - - - - - - - - - - - - - - - - - - -- - 55~150 ?? v dss ?a?a drain-s ource v o ltage -- ------ ----- ---- ------ ----- ---- ------ ----- ---- ------ ----- 60 v v dgr ?a?a drain-gate v o ltage (r gs ? 1m |? ) --------------------------------------------------------- 60v v gss ?a?a gate-source v o ltage ------------------------------------------------------------------------ 20v i d ?a?a drain current (c ontinuous) ---------------------------------------------------------------- 500m a p d ?a?a maxim u m pow e r d i ssipation ------------------------------------------------------------ 0.83w ? electrical characteristics ? ta = 2 5 ?? unless otherwise specified ? s y m b o l i t e m s m i n . t y p. max. unit c o n d i t i o n s bv dss d r ain-source breakdow n v o ltage 60 v v gs =0v , i d =100ua i dss zero g a te v o ltage d r ain current 0.5 ua v ds =25v , v gs =0v i gssf g a te ? body leakage, forw ard 10 na v gs =15v , v ds =0v v gs(th) g a te threshold v o ltage 0 . 8 3 . 0 v v ds = v gs , i d =1m a r ds(on) static d r ain-source o n -resistance 5 ? v gs =10v , i d =200m a g fs f o r w ard t r a n s c o n d u c t a n c e 320 m s v ds =10v , i d =200m a ciss input capacitance 2 4 4 0 pf coss o u tput capacitance 1 7 3 0 p f crss reverse transfer capacitance 7 1 0 p f v ds = 10 v , v gs = 0 v, f = 1.0 mh z ton turn - on tim e 1 0 n s toff turn - off tim e 1 0 n s v dd = 25 v , i d = 200 m a , v gs = 10 v , r gen = 25 ?
shantou huashan electronic devices co.,ltd . HBS170 ? performance curves
shantou huashan electronic devices co.,ltd . HBS170 ? performance curves
shantou huashan electronic devices co.,ltd . HBS170 ? performance curves
|
